Thin-film transistor array substrate and manufacturing method thereof

ABSTRACT

A thin film transistor array substrate includes: a substrate on which a thin film transistor and a storage capacitor are formed. The storage capacitor includes a first electrode plate formed on the substrate, a gate isolation layer or an etching stopper layer formed on the first electrode plate, and a second electrode plate formed on the gate isolation layer or the etching stopper layer. The etching stopper layer may be formed on the gate isolation layer, of which one is partially etched and removed such that there is only one of the gate isolation layer and the etching stopper layer existing between the two electrode plates of the storage capacitor so as to reduce the overall thickness of the isolation layer of the storage capacitor. Thus, the capacitor occupies a smaller area and a higher aperture ratio may be achieved.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional application of co-pending U.S. patent applicationSer. No. 15/701,454, filed on Sep. 12, 2017, which is a divisionalapplication of U.S. patent application Ser. No. 14/763,818, filed onJul. 27, 2015 and now U.S. Pat. No. 9,806,106, which is a national stageof PCT Application Number PCT/CN2015/079421, filed on May 21, 2015,claiming foreign priority of Chinese Patent Application Number201510206317.5, filed on Apr. 27, 2015.

FIELD OF THE INVENTION

The present invention relates to a flat panel display field, and moreparticularly to a thin film transistor array substrate and a manufacturemethod thereof.

BACKGROUND OF THE INVENTION

The active matrix panel display elements possess many merits of thinframe, power saving, no radiation, etc. and have been widely used. Inthe present market, the flat panel display comprises Liquid CrystalDisplays (LCD) and Organic Light Emitting Diodes (OLED).

The LCD comprises a liquid crystal display panel and a backlight module.The working principle of the liquid crystal display panel is to locateliquid crystal molecules between two parallel glass substrates. Thelight of back light module is reflected to generate images by applyingdriving voltages to control whether the liquid crystal molecules to bechanged directions.

An OLED possesses properties of self-illumination, high brightness, wideview angle, high contrast, flexibility and low power consumption, etc.,and accordingly has been received more attentions. As being the displayof next generation, it has been gradually replaced traditional liquidcrystal displays and widely applied in cellular phone screens, computerdisplays, full color TV, etc. OLED display technology is different fromthe traditional liquid crystal display technology and the back light isnot required. It utilizes an ultra thin organic material coating layerand a glass substrate, and theses organic material will illuminate whenthe current is conducted.

The thin film transistor array substrate has been widely applied in LCDand OLED, which generally comprises a glass substrate and a thin filmtransistor and a storage capacitor formed on the glass substrate.

The storage capacitor plays a role having the important functions ofmaintaining voltage level, reducing the coupling capacitor dividingvoltage. Generally, we prefer a larger capacitance. The calculation ofthe capacitance is C=εS/D, wherein S represents the area, and Drepresents the isolation layer thickness. To change the value of thestorage capacitor, several methods are listed, of which the first one isselecting an isolation material with a larger dielectric constant thesecond one is increasing the area; and the third one is reducing theisolation layer thickness.

Generally, enlarging the relative area of the two metal plates willincrease the capacitance. However, the storage capacitor is commonlymanufactured by clamping the isolation layer. The metal electrode isopaque. The larger the storage capacitor is, the lower the apertureratio becomes. Reducing the isolation layer thickness can increase thevalue of the storage capacitor, and on this basis, the relative area ofthe metal plates can be properly reduced, which is a better method ofincreasing the storage capacitor and raising the aperture ratio.

Referring to FIG. 1, a sectional view is provided to illustrate a knownthin film transistor array substrate, which comprises a substrate 100,and a thin film transistor and a storage capacitor formed on thesubstrate 100. The first electrode plate 310 and the second electrodeplate 320 of the storage capacitor clamp the gate isolation layer 300and the etching stopper layer 500 in-between. Because both the gateisolation layer 300 and the etching stopper layer 500 possess a certainthickness, which makes that the isolation layer is thicker and thestorage capacitance is smaller. A larger relative area is required forobtaining a desired capacitance value. Therefore, the element apertureratio is reduced.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a thin filmtransistor array substrate, possessing higher an aperture ratio while ashaving a larger storage capacitor.

Another objective of the present invention is to provide a manufacturingmethod of a thin film transistor array substrate for increasing theaperture ratio while enlarging the storage capacitor.

For realizing the aforesaid objectives, the present invention provides athin film transistor array substrate, comprising a substrate and a thinfilm transistor and a storage capacitor formed on the substrate;

wherein the storage capacitor comprises a first electrode plate on thesubstrate, a gate isolation layer or an etching stopper layer on thefirst electrode plate, a second electrode plate on the gate isolationlayer or the etching stopper layer.

The thin film transistor array substrate comprises a substrate, a firstgate, a second gate and a first electrode plate at one side of thesecond gate away from the first gate positioned on the substrate, a gateisolation layer positioned on the first gate, the second gate, the firstelectrode plate and the substrate, a first oxide semiconductor layer anda second oxide semiconductor layer respectively above the first gate andthe second gate positioned on the gate isolation layer, a secondelectrode plate above the first electrode plate positioned on the gateisolation layer, an etching stopper layer positioned on the first oxidesemiconductor layer, the second oxide semiconductor layer and the gateisolation layer, a first source, a first drain, a second source, asecond drain respectively above the first gate and the second gatepositioned on the etching stopper layer, a passivation layer positionedabove the first source, the first drain, the second source, the seconddrain and the second electrode plate covering the etching stopper layer,a flat layer positioned on the passivation layer, a pixel electrodelayer positioned on the flat layer, a pixel definition layer positionedon the flat layer and the pixel electrode layer and a photospacerpositioned on the pixel definition layer;

wherein the gate isolation layer is provided with a first via holecorrespondingly above the second gate close to one side of the firstgate, and the passivation layer and the flat layer are provided with asecond via hole correspondingly above the second source, and the pixeldefinition layer is provided with a third via hole correspondingly abovethe pixel electrode layer; the first source, the first drain contactwith the first oxide semiconductor layer, and the second source and thesecond drain contact with the second oxide semiconductor layer, and thefirst source contacts with the second gate through the first via hole,and the pixel electrode layer contacts with the second source throughthe second via hole, and the third via hole exposes a portion of thepixel electrode layer; and

the first gate, the second gate, the gate isolation layer, the firstoxide semiconductor layer, the second oxide semiconductor layer, theetching stopper layer, the first source, the first drain, the secondsource and the second drain construct a thin film transistor; the firstelectrode plate, the second electrode plate and the gate isolation layerbetween the first electrode plate and the second electrode plateconstruct a storage capacitor.

The thin film transistor array substrate comprises a substrate, a firstgate, a second gate and a first electrode plate at one side of thesecond gate away from the first gate positioned on the substrate, a gateisolation layer positioned on the first gate, the second gate and thesubstrate, a first oxide semiconductor layer and a second oxidesemiconductor layer respectively above the first gate and the secondgate positioned on the gate isolation layer, an etching stopper layerpositioned on the first oxide semiconductor layer, the second oxidesemiconductor layer, the gate isolation layer and the first electrodeplate, a second electrode plate above the first electrode platepositioned on the etching stopper layer, a first source, a first drain,a second source, a second drain respectively above the first gate andthe second gate positioned on the etching stopper layer, a passivationlayer positioned above the first source, the first drain, the secondsource, the second drain and the second electrode plate covering theetching stopper layer, a flat layer positioned on the passivation layer,a pixel electrode layer positioned on the flat layer, a pixel definitionlayer positioned on the flat layer and the pixel electrode layer and aphotospacer positioned on the pixel definition layer;

wherein the gate isolation layer is provided with a first via holecorrespondingly above the second gate close to one side of the firstgate, and the passivation layer and the flat layer are provided with asecond via hole correspondingly above the second source, and the pixeldefinition layer is provided with a third via hole correspondingly abovethe pixel electrode layer; the first source, the first drain contactwith the first oxide semiconductor layer, and the second source and thesecond drain contact with the second oxide semiconductor layer, and thefirst source contacts with the second gate through the first via hole,and the pixel electrode layer contacts with the second source throughthe second via hole, and the third via hole exposes a portion of thepixel electrode layer; and

the first gate, the second gate, the gate isolation layer, the firstoxide semiconductor layer, the second oxide semiconductor layer, theetching stopper layer, the first source, the first drain, the secondsource and the second drain construct a thin film transistor; the firstelectrode plate, the second electrode plate and the etching stopperlayer between the first electrode plate and the second electrode plateconstruct a storage capacitor.

A material of the gate isolation layer and a material of the etchingstopper layer are different.

Optionally, a material of the gate isolation layer is Al₂O₃, and amaterial of the etching stopper layer is SiOx.

Optionally, a material of the gate isolation layer is SiOx, and amaterial of the etching stopper layer is Al₂O₃.

The present invention further provides a manufacturing method of a thinfilm transistor array substrate, comprising the following steps:

Step 1, providing a substrate and depositing a first metal layer on thesubstrate, and implementing a patterning process to the first metallayer to obtain a first gate, a second gate, and a first electrode platelocated on one side of the second gate that is distant from the firstgate;

Step 2, depositing and patterning a gate isolation layer on the firstmetal layer to obtain a first via hole positioned above the second gateclose to one side of the first gate;

Step 3, depositing and patterning an oxide semiconductor layer on thegate isolation layer to obtain a first oxide semiconductor layer abovethe first gate and a second oxide semiconductor layer above the secondgate;

Step 4, depositing an etching stopper layer on the oxide semiconductorlayer, and implementing a patterning process to the etching stopperlayer to expose two side areas of the first oxide semiconductor layerand the second oxide semiconductor layer, and partially etching theetching stopper layer above the first electrode plate;

Step 5, depositing a second metal layer on the etching stopper layer andthe gate isolation layer, and implementing a patterning process to thesecond metal layer to obtain a first source and a first drain above thefirst gate, a second source and a second drain above the second gate,and a second electrode plate above the first electrode plate;

wherein the first source and the first drain contact with the two sideareas of the first oxide semiconductor layer; the second source and thesecond drain contact with the two side areas of the second oxidesemiconductor layer; and the first source contacts with the second gatethrough the first via hole;

Step 6, sequentially forming a passivation layer, a flat layer, a pixelelectrode layer, a pixel definition layer and a photospacer on thesecond metal layer and the etching stopper layer;

wherein the passivation layer and the flat layer are formed with asecond via hole correspondingly above the second source and the pixeldefinition layer is formed with a third via hole correspondingly abovethe pixel electrode layer; and the pixel electrode layer contacts withthe second source through the second via hole and the third via holeexposes a portion of the pixel electrode layer.

The gate isolation layer and the etching stopper layer are formed ofdifferent materials.

Optionally, the gate isolation layer is formed of Al₂O₃ and the etchingstopper layer is formed of SiOx.

Optionally, the gate isolation layer is formed of SiOx and the etchingstopper layer is formed of Al₂O₃.

The present invention further provides a manufacturing method of a thinfilm transistor array substrate, comprising the following steps:

Step 1, providing a substrate and depositing a first metal layer on thesubstrate, and implementing a patterning process to the first metallayer to obtain a first gate, a second gate, and a first electrode platelocated on one side of the second gate that is distant from the firstgate;

Step 2, depositing and patterning a gate isolation layer on the firstmetal layer to obtain a first via hole positioned above the second gateclose to one side of the first gate;

Step 3, depositing and patterning an oxide semiconductor layer on thegate isolation layer to obtain a first oxide semiconductor layer abovethe first gate and a second oxide semiconductor layer above the secondgate;

Step 4, depositing an etching stopper layer on the oxide semiconductorlayer, and implementing a patterning process to the etching stopperlayer to expose two side areas of the first oxide semiconductor layerand the second oxide semiconductor layer, and partially etching theetching stopper layer above the first electrode plate;

Step 5, depositing a second metal layer on the etching stopper layer andthe gate isolation layer, and implementing a patterning process to thesecond metal layer to obtain a first source and a first drain above thefirst gate, a second source and a second drain above the second gate,and a second electrode plate above the first electrode plate;

wherein the first source and the first drain contact with the two sideareas of the first oxide semiconductor layer; the second source and thesecond drain contact with the two side areas of the second oxidesemiconductor layer; and the first source contacts with the second gatethrough the first via hole;

Step 6, sequentially forming a passivation layer, a flat layer, a pixelelectrode layer, a pixel definition layer and a photospacer on thesecond metal layer and the etching stopper layer;

wherein the passivation layer and the flat layer are formed with asecond via hole correspondingly above the second source and the pixeldefinition layer is formed with a third via hole correspondingly abovethe pixel electrode layer; and the pixel electrode layer contacts withthe second source through the second via hole and the third via holeexposes a portion of the pixel electrode layer;

wherein the gate isolation layer and the etching stopper layer areformed of different materials; and

wherein the gate isolation layer is formed of Al₂O₃ and the etchingstopper layer is formed of SiOx.

The benefits of the present invention are as follows. Regarding the thinfilm transistor array substrate provided by the present invention,because there is only one isolation layer, which is the gate isolationlayer or the etching stopper layer, existing between the two electrodeplates of the storage capacitor in the aforesaid thin film transistorarray substrate, the isolation layer thickness of the storage capacitoris thinner, and relatively, the capacitor occupies a smaller area andpossesses a higher aperture ratio. In the manufacturing method of thethin film transistor array substrate according to the present invention,as etching the etching stopper layer, the portion of the etching stopperlayer on the first electrode plate is etched, and thus, the isolationlayer thickness of the storage capacitor can be decreased, andrelatively, the capacitor occupies a smaller area and possesses a higheraperture ratio; meanwhile, because the gate isolation layer and theetching stopper layer are formed of different materials, and the etchinggas is passive to the gate isolation layer for preventing the damage tothe gate isolation layer under in the process of etching the etchingstopper layer, it can be ensured to obtain an ideal storage capacitor.

In order to better understand the characteristics and technical aspectof the invention, please refer to the following detailed description ofthe present invention is concerned with the diagrams, however, providereference to the accompanying drawings and description only and is notintended to be limiting of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The technical solution and the beneficial effects of the presentinvention are best understood from the following detailed descriptionwith reference to the accompanying figures and embodiments.

In the drawings,

FIG. 1 is a sectional view showing a known thin film transistor arraysubstrate;

FIG. 2 is a sectional view showing a first embodiment of a thin filmtransistor array substrate according to the present invention;

FIG. 3 is a sectional view showing a second embodiment of a thin filmtransistor array substrate according to the present invention; and

FIG. 4 is a flowchart illustrating a manufacturing method of a thin filmtransistor array substrate according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

For better explaining the technical solution and the effect of thepresent invention, the present invention will be further described indetail with the accompanying drawings and the specific embodiments.

Referring to FIGS. 2 and 3, the present invention provides a thin filmtransistor array substrate, which comprises a substrate 1 and a thinfilm transistor and a storage capacitor formed on the substrate 1.

The storage capacitor comprises a first electrode plate 31 on thesubstrate 1, a gate isolation layer 3 or an etching stopper layer 5 onthe first electrode plate 31, a second electrode plate 32 on the gateisolation layer 3 or the etching stopper layer 5.

As shown in FIG. 2, a first embodiment of the thin film transistor arraysubstrate according to the present invention is shown, comprising asubstrate 1, a first gate 21, a second gate 22 and a first electrodeplate 31 at one side of the second gate 22 away from the first gate 21positioned on the substrate 1, a gate isolation layer 3 positioned onthe first gate 21, the second gate 22, the first electrode plate 31 andthe substrate 1, a first oxide semiconductor layer 41 and a second oxidesemiconductor layer 42 respectively above the first gate 21 and thesecond gate 22 positioned on the gate isolation layer 3, a secondelectrode plate 32 above the first electrode plate 31 positioned on thegate isolation layer 3, an etching stopper layer 5 positioned on thefirst oxide semiconductor layer 41, the second oxide semiconductor layer42 and the gate isolation layer 3, a first source 61, a first drain 62,a second source 63, a second drain 64 respectively above the first gate21 and the second gate 22 positioned on the etching stopper layer 5, apassivation layer 71 positioned above the first source 61, the firstdrain 62, the second source 63, the second drain 64 and the secondelectrode plate 32 covering the etching stopper layer 5, a flat layer 72positioned on the passivation layer 71, a pixel electrode layer 81positioned on the flat layer 72, a pixel definition layer 9 positionedon the flat layer 72 and the pixel electrode layer 81 and a photospacer91 positioned on the pixel definition layer 9.

The gate isolation layer 3 is provided with a first via hole 51correspondingly above the second gate 22 close to one side of the firstgate 21, and the passivation layer 71 and the flat layer 72 are providedwith a second via hole 52 correspondingly above the second source 63,and the pixel definition layer 9 is provided with a third via hole 53correspondingly above the pixel electrode layer 81; the first source 61,the first drain 62 contact with the first oxide semiconductor layer 41,and the second source 63 and the second drain 64 contact with the secondoxide semiconductor layer 42, and the first source 61 contacts with thesecond gate 22 through the first via hole 51, and the pixel electrodelayer 81 contacts with the second source 63 through the second via hole52, and the third via hole 53 exposes a portion of the pixel electrodelayer 81.

The first gate 21, the second gate 22, the gate isolation layer 3, thefirst oxide semiconductor layer 41, the second oxide semiconductor layer42, the etching stopper layer 5, the first source 61, the first drain62, the second source 63 and the second drain 64 construct a thin filmtransistor; the first electrode plate 31, the second electrode plate 32and the gate isolation layer 3 between the first electrode plate 31 andthe second electrode plate 32 construct a storage capacitor.

Because there is only one isolation layer, namely the gate isolationlayer 3, existing between the two electrode plates of the storagecapacitor, the isolation layer thickness of the storage capacitor isthinner, and thus, the capacitor occupies a smaller area and possesses ahigher aperture ratio.

Specifically, the gate isolation layer 3 and the etching stopper layer 5are formed of different materials. For example, the gate isolation layer3 is formed of Al₂O₃ and the etching stopper layer 5 is formed of SiOx;or alternatively, the gate isolation layer 3 is formed of SiOx and theetching stopper layer 5 is formed of Al₂O₃. In a manufacturing process,a portion of the etching stopper layer 5 on the first electrode plate 31is etched off. Because the gate isolation layer 3 and the etchingstopper layer 5 are formed of different materials, an etching gas foretching the etching stopper layer 5 is passive to the gate isolationlayer 3, and the gate isolation layer 3 located thereunder will not bedamaged in the etching process of the etching stopper layer 5 so as topreserve good element property.

As shown in FIG. 3, a second embodiment of the thin film transistorarray substrate according to the present invention is shown, comprisinga substrate 1, a first gate 21, a second gate 22 and a first electrodeplate 31 at one side of the second gate 22 away from the first gate 21positioned on the substrate 1, a gate isolation layer 3 positioned onthe first gate 21, the second gate 22 and the substrate 1, a first oxidesemiconductor layer 41 and a second oxide semiconductor layer 42respectively above the first gate 21 and the second gate 22 positionedon the gate isolation layer 3, an etching stopper layer 5 positioned onthe first oxide semiconductor layer 41, the second oxide semiconductorlayer 42, the gate isolation layer 3 and the first electrode plate 31, asecond electrode plate 32 above the first electrode plate 31 positionedon the etching stopper layer 5, a first source 61, a first drain 62, asecond source 63, a second drain 64 respectively above the first gate 21and the second gate 22 positioned on the etching stopper layer 5, apassivation layer 71 positioned above the first source 61, the firstdrain 62, the second source 63, the second drain 64 and the secondelectrode plate 32 covering the etching stopper layer 5, a flat layer 72positioned on the passivation layer 71, a pixel electrode layer 81positioned on the flat layer 72, a pixel definition layer 9 positionedon the flat layer 72 and the pixel electrode layer 81 and a photospacer91 positioned on the pixel definition layer 9.

The gate isolation layer 3 is provided with a first via hole 51correspondingly above the second gate 22 close to one side of the firstgate 21; the passivation layer 71 and the flat layer 72 are providedwith a second via hole 52 correspondingly above the second source 63;and the pixel definition layer 9 is provided with a third via hole 53correspondingly above the pixel electrode layer 81. The first source 61and the first drain 62 contact with the first oxide semiconductor layer41; the second source 63 and the second drain 64 contact with the secondoxide semiconductor layer 42; and the first source 61 contacts with thesecond gate 22 through the first via hole 51, and the pixel electrodelayer 81 contacts with the second source 63 through the second via hole52, and the third via hole 53 exposes a portion of the pixel electrodelayer 81.

The first gate 21, the second gate 22, the gate isolation layer 3, thefirst oxide semiconductor layer 41, the second oxide semiconductor layer42, the etching stopper layer 5, the first source 61, the first drain62, the second source 63 and the second drain 64 construct a thin filmtransistor; the first electrode plate 31, the second electrode plate 32and the etching stopper layer 5 between the first electrode plate 31 andthe second electrode plate 32 construct a storage capacitor.

Because there is only one isolation layer, namely the etching stopperlayer 5, existing between the two electrode plates of the storagecapacitor, and in a manufacturing process, a portion of the gateisolation layer 3 on the first electrode plate 31 is etched off, theisolation layer thickness of the storage capacitor is thinner, and thus,the capacitor occupies a smaller area and possesses a higher apertureratio.

Preferably, there is only one isolation layer, which is the gateisolation layer 3, existing between the two electrode plates of thestorage capacitor, and this is the aforesaid first embodiment. Becausein the second embodiment, if the portion of the gate isolation layer 3on the first electrode plate 31 is etched off, and no protection isapplied to the first electrode plate 31 of the storage capacitor in thefollowing process, which makes it easily be damaged, such as corrosion.

Because there is only one isolation layer, which is the gate isolationlayer or the etching stopper layer, existing between the two electrodeplates of the storage capacitor in the aforesaid thin film transistorarray substrate, the isolation layer thickness of the storage capacitoris thinner, and thus, the capacitor occupies a smaller area andpossesses a higher aperture ratio.

Referring to FIG. 4, in combination with FIG. 2, the present inventionalso provides a manufacturing method of a thin film transistor arraysubstrate, which comprises the following steps:

Step 1, providing a substrate 1 and depositing a first metal layer onthe substrate 1, and implementing a patterning process to the firstmetal layer to obtain a first gate 21, a second gate 22, and a firstelectrode plate 31 located on one side of the second gate 22 that isdistant from the first gate 21.

Specifically, the substrate 1 is a glass substrate or a plasticsubstrate.

Step 2, depositing and patterning a gate isolation layer 3 on the firstmetal layer to obtain a first via hole 51 positioned above the secondgate 22 close to one side of the first gate 21.

Step 3, depositing and patterning an oxide semiconductor layer on thegate isolation layer 3 to obtain a first oxide semiconductor layer 41above the first gate 21 and a second oxide semiconductor layer 42 abovethe second gate 22.

Step 4, depositing an etching stopper layer 5 on the oxide semiconductorlayer, and implementing a patterning process to the etching stopperlayer 5 to expose two side areas of the first oxide semiconductor layer41 and the second oxide semiconductor layer 42, and partially etchingthe etching stopper layer 5 above the first electrode plate 31.

Specifically, the gate isolation layer 3 and the etching stopper layer 5are formed of different materials. For example, the gate isolation layer3 is formed of Al₂O₃ and the etching stopper layer 5 is formed of SiOx;or, alternatively, the gate isolation layer 3 is formed of SiOx and theetching stopper layer 5 is formed pf Al₂O₃. An etching gas for etchingthe etching stopper layer 5 is passive to the gate isolation layer 3.Thus, the gate isolation layer 3 located thereunder will not be damagedin an etching process of the etching stopper layer 5 and good elementproperty can be preserved.

Step 5, depositing a second metal layer on the etching stopper layer 5and the gate isolation layer 3, and implementing a patterning process tothe second metal layer to obtain a first source 61 and a first drain 62above the first gate 21, a second source 63 and a second drain 64 abovethe second gate 22, and a second electrode plate 32 above the firstelectrode plate 31.

The first source 61 and the first drain 62 contact with two side areasof the first oxide semiconductor layer 41. The second source 63 and thesecond drain 64 contact with two side areas of the second oxidesemiconductor layer 42. The first source 61 contacts with the secondgate 22 through the first via hole 51.

Step 6, sequentially forming a passivation layer 71, a flat layer 72, apixel electrode layer 81, a pixel definition layer 9 and a photospacer91 on the second metal layer and the etching stopper layer 5.

The passivation layer 71 and the flat layer 72 are formed with a secondvia hole 52 correspondingly above the second source 63. The pixeldefinition layer 9 is formed with a third via hole 53 correspondinglyabove the pixel electrode layer 81. The pixel electrode layer 81contacts with the second source 63 through the second via hole 52. Thethird via hole 53 exposes a portion of the pixel electrode layer 81.

Specifically, all the passivation layer 71, the flat layer 72, the pixelelectrode layer 81, the pixel definition layer 9 and the photospacer 91can be manufactured with the present skills.

Significantly, in manufacturing the aforesaid thin film transistor arraysubstrate, it can be another option to selectively etching the portionof the gate isolation layer 3 on the first electrode plate 31 to makeonly one isolation layer, namely the etching stopper layer 5, existingbetween the two electrode plates of the storage capacitor, to decreasethe isolation layer thickness of the storage capacitor, and relatively,the capacitor occupies a smaller area and possesses a higher apertureratio; however, the drawback of this manufacture method is that, noprotection is applied to the first electrode plate 31 of the storagecapacitor in the following process, which makes it easily be damaged,such as corrosion.

In the aforesaid manufacturing method of the thin film transistor arraysubstrate, as etching the etching stopper layer, the portion of theetching stopper layer on the first electrode plate is etched, and thus,the isolation layer thickness of the storage capacitor can be decreased,and thus, the capacitor occupies a smaller area and possesses a higheraperture ratio; meanwhile, because the gate isolation layer and theetching stopper layer are formed of different materials, and the etchinggas is passive to the gate isolation layer for preventing the damage tothe gate isolation layer under in the process of etching the etchingstopper layer, it can be ensured to obtain an ideal storage capacitor.

In conclusion, as regarding the thin film transistor array substrateprovided by the present invention, because there is only one isolationlayer, which is the gate isolation layer or the etching stopper layer,existing between the two electrode plates of the storage capacitor inthe aforesaid thin film transistor array substrate, the isolation layerthickness of the storage capacitor is thinner, and relatively, thecapacitor occupies a smaller area and possesses a higher aperture ratio.In the manufacture method of the thin film transistor array substrateaccording to the present invention, as etching the etching stopperlayer, the portion of the etching stopper layer on the first electrodeplate is etched, and thus, the isolation layer thickness of the storagecapacitor can be decreased, and relatively, the capacitor occupies asmaller area and possesses a higher aperture ratio; meanwhile, becausethe gate isolation layer and the etching stopper layer are formed bydifferent materials, and the etching gas is passive to the gateisolation layer for preventing the damage to the gate isolation layerunder in the process of etching the etching stopper layer, it can beensured to obtain an ideal storage capacitor.

Above are only specific embodiments of the present invention, the scopeof the present invention is not limited to this, and to any persons whoare skilled in the art, change or replacement which is easily derivedshould be covered by the protected scope of the invention. Thus, theprotected scope of the invention should go by the subject claims.

What is claimed is:
 1. A thin film transistor array substrate, comprising a substrate having a surface and a first thin film transistor and a storage capacitor formed on the surface of the substrate; wherein the first thin film transistor comprises a first gate formed on the surface of the substrate and the storage capacitor comprises a first electrode plate formed on the surface of the substrate and spaced from the first gate by a predetermined distance along the surface of the substrate, a gate isolation layer formed on the surface of the substrate and the first gate so as to cover the first gate, wherein a portion the gate isolation layer is located on the surface of the substrate and surrounds the first electrode plate such that a top surface of the portion of the gate isolation layer is flush with a top surface of the first electrode plate to collectively define a flat surface; wherein the first thin film transistor further comprises a first oxide semiconductor layer formed on the gate isolation layer and located above and corresponding to the first gate; and wherein an etching stopper layer is formed on the gate isolation layer, the first oxide semiconductor layer, the etching stopper layer having a first part covering the first oxide semiconductor layer and formed with openings in which a first drain and a first source of the first thin film transistor are formed and in electrical connection with the first oxide semiconductor layer, the etching stopper layer having a second part that is spaced from the first part and covers the flat surface defined by the top surface of the portion of the gate isolation layer and the top surface of the first electrode plate such that the second part of the etching stopper layer has a top surface spaced from the flat surface that is defined by the top surface of the portion of the gate isolation layer and the top of the first electrode to receive a second electrode plate of the storage capacitor to form thereon at a location corresponding to the first electrode plate, wherein the second electrode plate is in direct contact with the top surface of the second part of the etching stopper layer and the second part of the etching stopper layer is in direct contact with the top surface of the first electrode plate, the second part of the etching stopper layer being interposed between and in direct contact with the first and second electrode plates.
 2. The thin film transistor array substrate according to claim 1, further comprising a second thin film transistor that comprises a second gate formed on the surface of the substrate in a space defined by the predetermined distance between the first electrode plate and the first gate of the first thin film transistor, the gate isolation layer having an additional portion positioned on and covering the second gate, the first electrode plate and the substrate, the second thin film transistor comprising a second oxide semiconductor layer formed on the additional portion of the gate isolation layer and located above and corresponding to the second gate, the etching stopper having an additional part positioned and covering the second oxide semiconductor layer to additionally cover the second oxide semiconductor and having additional openings formed therein, a second source and a second drain of the second thin film transistor being respectively formed in the additional openings of the etching stopper layer and in electrical connection with the second oxide semiconductor layer; wherein the gate isolation layer is provided with a first via corresponding to and exposing a portion of the second gate such that the first source contacts with the second gate through the first via.
 3. The thin film transistor array substrate according to claim 1, wherein a material of the gate isolation layer and a material of the etching stopper layer are different.
 4. The thin film transistor array substrate as claimed in claim 3, wherein the material of the gate isolation layer comprises Al₂O₃ and the material of the etching stopper layer comprises SiOx.
 5. The thin film transistor array substrate as claimed in claim 3, wherein the material of the gate isolation layer comprises SiOx and the material of the etching stopper layer comprises Al₂O₃.
 6. The thin film transistor array substrate according to claim 2, wherein a material of the gate isolation layer and a material of the etching stopper layer are different.
 7. The thin film transistor array substrate as claimed in claim 6, wherein the material of the gate isolation layer comprises Al₂O₃ and the material of the etching stopper layer comprises SiOx.
 8. The thin film transistor array substrate as claimed in claim 6, wherein the material of the gate isolation layer comprises SiOx and the material of the etching stopper layer comprises Al₂O₃. 